Research of Vertical via Based on Silicon, Ceramic and Glass
With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Mo...
Main Authors: | , , |
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Format: | Article |
Language: | English |
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MDPI AG
2023-07-01
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Series: | Micromachines |
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Online Access: | https://www.mdpi.com/2072-666X/14/7/1391 |
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author | Wenchao Tian Sixian Wu Wenhua Li |
author_facet | Wenchao Tian Sixian Wu Wenhua Li |
author_sort | Wenchao Tian |
collection | DOAJ |
description | With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore’s Law because of its advantages of low energy consumption, lightweight and high performance. Through-silicon via (TSV) is considered to be at the core of 3D integration because of its excellent electrical performance, lower power consumption, wider bandwidth, higher density, smaller overall size and lighter weight. Therefore, the particular emphasis of this review is the process flow of TSV technology. Among them, the research status of TSV hole etching, deep hole electroplating filling and chemical mechanical planarization (CMP) in TSV preparation process are introduced in detail. There are a multitude of inevitable defects in the process of TSV processing; thus, the stress problems and electrical characteristics that affect the reliability of TSV are summarized in this review. In addition, the process flow and process optimization status of through ceramic via (TCV) and through glass via (TGV) are discussed. |
first_indexed | 2024-03-11T00:49:10Z |
format | Article |
id | doaj.art-b851d14b342a4fb6b75b0e17fff71c6f |
institution | Directory Open Access Journal |
issn | 2072-666X |
language | English |
last_indexed | 2024-03-11T00:49:10Z |
publishDate | 2023-07-01 |
publisher | MDPI AG |
record_format | Article |
series | Micromachines |
spelling | doaj.art-b851d14b342a4fb6b75b0e17fff71c6f2023-11-18T20:32:46ZengMDPI AGMicromachines2072-666X2023-07-01147139110.3390/mi14071391Research of Vertical via Based on Silicon, Ceramic and GlassWenchao Tian0Sixian Wu1Wenhua Li2School of Electro-Mechanical Engineering, Xidian University, Xi’an 710000, ChinaSchool of Electro-Mechanical Engineering, Xidian University, Xi’an 710000, ChinaSchool of Electro-Mechanical Engineering, Xidian University, Xi’an 710000, ChinaWith the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore’s Law because of its advantages of low energy consumption, lightweight and high performance. Through-silicon via (TSV) is considered to be at the core of 3D integration because of its excellent electrical performance, lower power consumption, wider bandwidth, higher density, smaller overall size and lighter weight. Therefore, the particular emphasis of this review is the process flow of TSV technology. Among them, the research status of TSV hole etching, deep hole electroplating filling and chemical mechanical planarization (CMP) in TSV preparation process are introduced in detail. There are a multitude of inevitable defects in the process of TSV processing; thus, the stress problems and electrical characteristics that affect the reliability of TSV are summarized in this review. In addition, the process flow and process optimization status of through ceramic via (TCV) and through glass via (TGV) are discussed.https://www.mdpi.com/2072-666X/14/7/1391TSVTGVTCVprocess optimization |
spellingShingle | Wenchao Tian Sixian Wu Wenhua Li Research of Vertical via Based on Silicon, Ceramic and Glass Micromachines TSV TGV TCV process optimization |
title | Research of Vertical via Based on Silicon, Ceramic and Glass |
title_full | Research of Vertical via Based on Silicon, Ceramic and Glass |
title_fullStr | Research of Vertical via Based on Silicon, Ceramic and Glass |
title_full_unstemmed | Research of Vertical via Based on Silicon, Ceramic and Glass |
title_short | Research of Vertical via Based on Silicon, Ceramic and Glass |
title_sort | research of vertical via based on silicon ceramic and glass |
topic | TSV TGV TCV process optimization |
url | https://www.mdpi.com/2072-666X/14/7/1391 |
work_keys_str_mv | AT wenchaotian researchofverticalviabasedonsiliconceramicandglass AT sixianwu researchofverticalviabasedonsiliconceramicandglass AT wenhuali researchofverticalviabasedonsiliconceramicandglass |