The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes

The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes

In this paper, a near-ultraviolet LED structure was fabricated on a sapphire substrate by using metal–organic chemical vapor deposition with an undoped AlGaN insertion layer introduced between multiple quantum wells and electron blocking layers, and the effect of layer thickness on light-electric pe...

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Bibliographic Details
Main Authors: Chaozhi Xu, Lie Cai, Jinjian Zheng, Haoxiang Lin, Zhichao Chen, Kai Niu, Zaijun Cheng, Feibing Xiong
Format: Article
Language:English
Published: Elsevier 2023-12-01
Series:Results in Physics
Subjects:
InGaN/AlGaN
NUV LED
AlGaN insertion layer
EQE
Light output power
Online Access:http://www.sciencedirect.com/science/article/pii/S221137972300904X

Internet

http://www.sciencedirect.com/science/article/pii/S221137972300904X

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