Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier

Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier

We employed the local p-doped region with a concentration of 3 × 10<sup>16</sup> cm<sup>−3</sup>, 5 × 10<sup>16</sup> cm<sup>−3</sup> and 7 × 10<sup>16</sup> cm<sup>−3</sup> in the back-barrier of full-AlGaN high electron mobili...

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Bibliographic Details
Main Authors: Pei Shen, Kai Wang, Ling Chen, Yi Fang, Yuqi Liu, Hong Wang
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Electronics
Subjects:
AlGaN HEMT
back-barrier
local p-doped
electric field
breakdown voltage
current density
Online Access:https://www.mdpi.com/2079-9292/11/13/1939

Internet

https://www.mdpi.com/2079-9292/11/13/1939

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