Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier

Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier

We employed the local p-doped region with a concentration of 3 × 10<sup>16</sup> cm<sup>−3</sup>, 5 × 10<sup>16</sup> cm<sup>−3</sup> and 7 × 10<sup>16</sup> cm<sup>−3</sup> in the back-barrier of full-AlGaN high electron mobili...

Full description

Bibliographic Details
Main Authors:	Pei Shen, Kai Wang, Ling Chen, Yi Fang, Yuqi Liu, Hong Wang
Format:	Article
Language:	English
Published:	MDPI AG 2022-06-01
Series:	Electronics
Subjects:	AlGaN HEMT back-barrier local p-doped electric field breakdown voltage current density
Online Access:	https://www.mdpi.com/2079-9292/11/13/1939

Similar Items

Novel super junction technique used in AlGaN/GaN HEMT for high power applications
by: A Arunraja, et al.
Published: (2022-01-01)

Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes
by: Yi Fang, et al.
Published: (2022-05-01)

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates
by: Jianhua Liu, et al.
Published: (2020-01-01)

Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit
by: Xiaoyi Liu, et al.
Published: (2023-01-01)

A Novel AlGaN/Si<sub>3</sub>N<sub>4</sub> Compound Buffer Layer HEMT with Improved Breakdown Performances
by: Jingwei Guo, et al.
Published: (2022-03-01)

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT
by: Jianhua Liu, et al.
Published: (2022-01-01)

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance
by: Jianhua Liu, et al.
Published: (2021-10-01)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
by: Maodan Ma, et al.
Published: (2022-12-01)

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
by: Xiaoyu Xia, et al.
Published: (2021-10-01)

High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
by: Jun-Hyeok Lee, et al.
Published: (2018-01-01)

RESURF Principle in AlGaN/GaN HEMTs: Accurate 1-D Modeling on Off-State Avalanche Breakdown Behavior via Effective Concentration Profile
by: Jun Zhang, et al.
Published: (2020-01-01)

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer
by: Chao Yang, et al.
Published: (2019-06-01)

Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage
by: Shuxiang Sun, et al.
Published: (2024-06-01)

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
by: Jingyu Shen, et al.
Published: (2023-10-01)

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
by: Kathia Harrouche, et al.
Published: (2023-01-01)

Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
by: Yusnizam Yusuf, et al.
Published: (2023-01-01)

Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier
by: Yuchen Li, et al.
Published: (2022-04-01)

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance
by: Miao Zhang, et al.
Published: (2021-01-01)

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate
by: Isra Mahaboob, et al.
Published: (2019-01-01)

High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains
by: Weihang Zhang, et al.
Published: (2018-01-01)

Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation
by: Sakhone Pharkphoumy, et al.
Published: (2021-10-01)

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates
by: Sakhone Pharkphoumy, et al.
Published: (2023-02-01)

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate
by: Peiran Wang, et al.
Published: (2023-01-01)

Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
by: Moath Alathbah, et al.
Published: (2022-11-01)

Optimization AlGaN/GaN HEMT with Field Plate Structures
by: Ningping Shi, et al.
Published: (2022-04-01)

A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs
by: He Guan, et al.
Published: (2021-01-01)

Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
by: Abdelkrim Khediri, et al.
Published: (2021-10-01)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
by: Ahmed Salah Hawash Razeen
Published: (2024)

Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs
by: Jeong-Gil Kim, et al.
Published: (2022-01-01)

Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs
by: Qizheng Ji, et al.
Published: (2023-03-01)

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs
by: Nicolò Zagni, et al.
Published: (2021-06-01)

Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range
by: Shouyi Wang, et al.
Published: (2022-01-01)

AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer
by: Taofei Pu, et al.
Published: (2022-01-01)

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs
by: Hongyue Wang, et al.
Published: (2022-01-01)

Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application
by: Ping-Hsun Lee, et al.
Published: (2023-01-01)

Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
by: Baoxing Duan, et al.
Published: (2020-01-01)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
by: You-Chen Weng, et al.
Published: (2023-04-01)

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
by: Alexei V. Sakharov, et al.
Published: (2023-06-01)

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond
by: Ranjan, Kumud, et al.
Published: (2020)

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage
by: Yachao Zhang, et al.
Published: (2020-05-01)