High-Density Spin–Orbit Torque Magnetic Random Access Memory With Voltage-Controlled Magnetic Anisotropy/Spin-Transfer Torque Assist
This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs). We use two write mechanisms to selectively write the MTJs, i.e., voltage-controlled...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9994702/ |