A DFT study of the optoelectronic properties of B and Be-doped Graphene

A DFT study of the optoelectronic properties of B and Be-doped Graphene

The electronic and optical properties of Boron (B) and Beryllium (Be)-doped graphene were determined using the ab initio approach based on the generalized gradient approximations within the Full potential linearized Augmented Plane wave formalism (FP-LAPW) formalism. Our findings demonstrated that...

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Bibliographic Details
Main Authors: L. O. Agbolade, A. K. Y. Dafhalla, D. M. I. Zayan, T. Adam, A. Chik, A. A. Adewale, S. C. B. Gopinath, U. Hashim
Format: Article
Language:English
Published: Nigerian Society of Physical Sciences 2024-01-01
Series:Journal of Nigerian Society of Physical Sciences
Subjects:
Graphene
P-type doping
Dielectrics
DFT
Semiconducting devices
Online Access:https://journal.nsps.org.ng/index.php/jnsps/article/view/1730

Internet

https://journal.nsps.org.ng/index.php/jnsps/article/view/1730

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