High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobil...

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Bibliographic Details
Main Authors: Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Micromachines
Subjects:
p-GaN gate HEMT
normally off
low-resistance SiC substrate
temperature
Online Access:https://www.mdpi.com/2072-666X/12/5/509

Internet

https://www.mdpi.com/2072-666X/12/5/509

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