AlGaInAs/InP Based Five & Three Quantum Wells Mode Locked Laser Diodes: A Comparative Study
Comparison of performance of semiconductor mode-locked laser diodes fabricated using AlGaInAs/InP material containing 5 and 3 quantum wells (QWs) inside the active region is reported. The simulations and experimental results show that lasers containing five QWs materials produce larger beam divergen...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Kaunas University of Technology
2020-10-01
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| Series: | Elektronika ir Elektrotechnika |
| Subjects: | |
| Online Access: | https://eejournal.ktu.lt/index.php/elt/article/view/26002 |