Steady-State Simulation of Semiconductor Devices Using Discontinuous Galerkin Methods

Steady-State Simulation of Semiconductor Devices Using Discontinuous Galerkin Methods

Design of modern nanostructured semiconductor devices often calls for simulation tools capable of modeling arbitrarily-shaped multiscale geometries. In this work, to this end, a discontinuous Galerkin (DG) method-based framework is developed to simulate steady-state response of semiconductor devices...

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Bibliographic Details
Main Authors: Liang Chen, Hakan Bagci
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Discontinuous Galerkin method
drift-diffusion equations
multiphysics modeling
Poisson equation
semiconductor device modeling
Online Access:https://ieeexplore.ieee.org/document/8962016/

Internet

https://ieeexplore.ieee.org/document/8962016/

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