An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper. The Effective Substrate Voltage (ESV) concept is proposed so that the derivation of electric field...

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Bibliographic Details
Main Authors: Kemeng Yang, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Ling Du, Xiaoming Huang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
LDMOS
arbitrary doping profile
electric field
breakdown voltage (BV)
Online Access:https://ieeexplore.ieee.org/document/8941064/

Internet

https://ieeexplore.ieee.org/document/8941064/

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