Insight on defects mechanically introduced by nanoindentation in 4H-SiC p-n diode

We investigate defects in 4H-SiC p-n junction diodes introduced trough nanoindentation procedure. A nanoindentation load range between 3 mN and 15 mN was explored. Scanning Electron Microscopy and Transmission Electron Microscopy analysis are adopted for the morphological and crystallographic invest...

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Bibliographic Details
Main Authors:	Antonella Sciuto, Pietro Paolo Barbarino, Domenico Mello, Giuseppe D'Arrigo
Format:	Article
Language:	English
Published:	Elsevier 2024-03-01
Series:	Materials & Design
Subjects:	4H-SiC p-n junction Defects Optically active defects Photon source Photon emitting sites Electrical pumping of SiC defects
Online Access:	http://www.sciencedirect.com/science/article/pii/S0264127524001230

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http://www.sciencedirect.com/science/article/pii/S0264127524001230

Insight on defects mechanically introduced by nanoindentation in 4H-SiC p-n diode

Internet

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