Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Abstract Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is reported. Superlattices containing alternating 10 nm-thick GaAsBi and AlAs layers were grown on semi-insulating GaAs substrate. AlAs layer...

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Bibliographic Details
Main Authors: Renata Butkutė, Gediminas Niaura, Evelina Pozingytė, Bronislovas Čechavičius, Algirdas Selskis, Martynas Skapas, Vytautas Karpus, Arūnas Krotkus
Format: Article
Language:English
Published: SpringerOpen 2017-06-01
Series:Nanoscale Research Letters
Subjects:
Bismides
Quantum nanostructures
Molecular beam epitaxy
High-resolution transmission electron microscopy
Raman spectroscopy
Photoluminescence
Online Access:http://link.springer.com/article/10.1186/s11671-017-2205-7

Internet

http://link.springer.com/article/10.1186/s11671-017-2205-7

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