Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H<sub>2</sub>B(pz)<s...

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Bibliographic Details
Main Authors: Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter A. Dowben
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Magnetochemistry
Subjects:
molecular devices
molecular multiferroics
spin crossover
voltage control
nonvolatile memory
Online Access:https://www.mdpi.com/2312-7481/7/3/37

Internet

https://www.mdpi.com/2312-7481/7/3/37

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