Frequency characteristics of integral Hall sensor

The results of device-technological and schematic simulation of the silicon Hall sensor with the purpose of determine its dynamic characteristics are presented. The influence of the dimensions of the active region is investigated, the theoretical and actual values of the upper limit of the bandwidth...

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Bibliographic Details
Main Authors: D. Ha. Dao, V. R. Stempitsky
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
Online Access:https://doklady.bsuir.by/jour/article/view/998