Frequency characteristics of integral Hall sensor
The results of device-technological and schematic simulation of the silicon Hall sensor with the purpose of determine its dynamic characteristics are presented. The influence of the dimensions of the active region is investigated, the theoretical and actual values of the upper limit of the bandwidth...
Main Authors: | D. Ha. Dao, V. R. Stempitsky |
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Format: | Article |
Language: | Russian |
Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
Subjects: | |
Online Access: | https://doklady.bsuir.by/jour/article/view/998 |
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