Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer

Abstract The ability to configure the optimal buffer layer for GaN growth depends on the knowledge of relaxation processes that occurs during the cooling step while countering the tensile stresses due to the contrast of thermal expansion coefficient between GaN and Si(111) substrate. Here, we inaugu...

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Bibliografski detalji
Glavni autori: Marwan Mansor, Rizuan Norhaniza, Ahmad Shuhaimi, Muhammad Iznul Hisyam, Al-Zuhairi Omar, Adam Williams, Mohd Rofei Mat Hussin
Format: Članak
Jezik:English
Izdano: Nature Portfolio 2023-05-01
Serija:Scientific Reports
Online pristup:https://doi.org/10.1038/s41598-023-35677-5