APA (7th ed.) Citation

Mansor, M., Norhaniza, R., Shuhaimi, A., Hisyam, M. I., Omar, A., Williams, A., & Hussin, M. R. M. (2023). Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer. Nature Portfolio.

Chicago Style (17th ed.) Citation

Mansor, Marwan, Rizuan Norhaniza, Ahmad Shuhaimi, Muhammad Iznul Hisyam, Al-Zuhairi Omar, Adam Williams, and Mohd Rofei Mat Hussin. Enhancement of Gallium Nitride on Silicon (111) Using Pulse Atomic-layer Epitaxy (PALE) AlN with Composition-graded AlGaN Buffer. Nature Portfolio, 2023.

MLA (9th ed.) Citation

Mansor, Marwan, et al. Enhancement of Gallium Nitride on Silicon (111) Using Pulse Atomic-layer Epitaxy (PALE) AlN with Composition-graded AlGaN Buffer. Nature Portfolio, 2023.