Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer
Abstract The ability to configure the optimal buffer layer for GaN growth depends on the knowledge of relaxation processes that occurs during the cooling step while countering the tensile stresses due to the contrast of thermal expansion coefficient between GaN and Si(111) substrate. Here, we inaugu...
| Հիմնական հեղինակներ: | , , , , , , |
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| Ձևաչափ: | Հոդված |
| Լեզու: | English |
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Nature Portfolio
2023-05-01
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| Շարք: | Scientific Reports |
| Առցանց հասանելիություն: | https://doi.org/10.1038/s41598-023-35677-5 |