Enhanced thermoelectric performance in K0.87RhO2 thin films induced by changing ambient gases during pulsed laser deposition
K0.87RhO2 thin films were prepared by pulsed laser deposition on fused silica substrates under different ambient gases. Besides the usual forming gas for oxides (i.e., O2), N2, Ar, mixture of O2 + N2, mixture of O2 + Ar, and vacuum were used during deposition. Although the crystal structure remained...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0057299 |
| _version_ | 1818602722667003904 |
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| author | Wenhao Luo Liangjie Li Yingbang Yao Bing Luo Fuzeng Zhang Tingting Wang |
| author_facet | Wenhao Luo Liangjie Li Yingbang Yao Bing Luo Fuzeng Zhang Tingting Wang |
| author_sort | Wenhao Luo |
| collection | DOAJ |
| description | K0.87RhO2 thin films were prepared by pulsed laser deposition on fused silica substrates under different ambient gases. Besides the usual forming gas for oxides (i.e., O2), N2, Ar, mixture of O2 + N2, mixture of O2 + Ar, and vacuum were used during deposition. Although the crystal structure remained the same for all films, their electrical and thermoelectric properties were modified significantly depending on the ambient gases. Compared with the film deposited under O2, the film deposited under N2 exhibits electrical resistances one order of magnitude smaller, while the film prepared in N2 + O2 shows 50% enhancement in Seebeck coefficients. Moreover, the thermoelectric power factor was enhanced more than 100% as the ambient gas changed to Ar. Origins of such improvements in thermoelectric performance were discussed from the point of view of crystal defects, such as oxygen vacancies. Our results suggest an efficient way to modify the performance of K0.87RhO2 thermoelectric materials. |
| first_indexed | 2024-12-16T13:11:48Z |
| format | Article |
| id | doaj.art-ba049427d9fe406297cc9a371f01a8ef |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-16T13:11:48Z |
| publishDate | 2021-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-ba049427d9fe406297cc9a371f01a8ef2022-12-21T22:30:36ZengAIP Publishing LLCAIP Advances2158-32262021-07-01117075321075321-610.1063/5.0057299Enhanced thermoelectric performance in K0.87RhO2 thin films induced by changing ambient gases during pulsed laser depositionWenhao Luo0Liangjie Li1Yingbang Yao2Bing Luo3Fuzeng Zhang4Tingting Wang5School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, ChinaChina Southern Power Grid, Guangzhou 510080, ChinaChina Southern Power Grid, Guangzhou 510080, ChinaChina Southern Power Grid, Guangzhou 510080, ChinaK0.87RhO2 thin films were prepared by pulsed laser deposition on fused silica substrates under different ambient gases. Besides the usual forming gas for oxides (i.e., O2), N2, Ar, mixture of O2 + N2, mixture of O2 + Ar, and vacuum were used during deposition. Although the crystal structure remained the same for all films, their electrical and thermoelectric properties were modified significantly depending on the ambient gases. Compared with the film deposited under O2, the film deposited under N2 exhibits electrical resistances one order of magnitude smaller, while the film prepared in N2 + O2 shows 50% enhancement in Seebeck coefficients. Moreover, the thermoelectric power factor was enhanced more than 100% as the ambient gas changed to Ar. Origins of such improvements in thermoelectric performance were discussed from the point of view of crystal defects, such as oxygen vacancies. Our results suggest an efficient way to modify the performance of K0.87RhO2 thermoelectric materials.http://dx.doi.org/10.1063/5.0057299 |
| spellingShingle | Wenhao Luo Liangjie Li Yingbang Yao Bing Luo Fuzeng Zhang Tingting Wang Enhanced thermoelectric performance in K0.87RhO2 thin films induced by changing ambient gases during pulsed laser deposition AIP Advances |
| title | Enhanced thermoelectric performance in K0.87RhO2 thin films induced by changing ambient gases during pulsed laser deposition |
| title_full | Enhanced thermoelectric performance in K0.87RhO2 thin films induced by changing ambient gases during pulsed laser deposition |
| title_fullStr | Enhanced thermoelectric performance in K0.87RhO2 thin films induced by changing ambient gases during pulsed laser deposition |
| title_full_unstemmed | Enhanced thermoelectric performance in K0.87RhO2 thin films induced by changing ambient gases during pulsed laser deposition |
| title_short | Enhanced thermoelectric performance in K0.87RhO2 thin films induced by changing ambient gases during pulsed laser deposition |
| title_sort | enhanced thermoelectric performance in k0 87rho2 thin films induced by changing ambient gases during pulsed laser deposition |
| url | http://dx.doi.org/10.1063/5.0057299 |
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