Impact of post-deposition annealing on SiO2/SiC interfaces formed by plasma nitridation of the SiC surface and SiO2 deposition
We examined the impact of post-deposition annealing (PDA) on SiO _2 /SiC structures formed by plasma nitridation of the SiC surface followed by sputter deposition of SiO _2 . The interface state density near the conduction band edge of SiC was reduced from about 2 × 10 ^12 to 1 × 10 ^11 eV ^−1 cm ^−...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ad918f |