On the Chemical Origin of the Gap Bowing in (GaAs)<sub>1&#8722;<it>x</it> </sub>Ge<sub>2<it>x</it> </sub> Alloys: A Combined DFT&#8211;QS<it>GW</it> Study

On the Chemical Origin of the Gap Bowing in (GaAs)<sub>1&#8722;<it>x</it> </sub>Ge<sub>2<it>x</it> </sub> Alloys: A Combined DFT&#8211;QS<it>GW</it> Study

<p>Abstract</p> <p>Motivated by the research and analysis of new materials for photovoltaics and by the possibility of tailoring their optical properties for improved solar energy conversion, we have focused our attention on the (GaAs)<sub>1<b>&#8722;</b> <...

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Bibliographic Details
Main Authors: Van Schilfgaarde Mark, Korkin Anatoli, Giorgi Giacomo, Yamashita Koichi
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Photovoltaics
III&#8211;V IV-doped alloys
Bandgap bowing
Order&#8211;disorder phase transition
DFT
Quasiparticle Self-consistent <it>GW</it>
Online Access:http://dx.doi.org/10.1007/s11671-009-9516-2

Internet

http://dx.doi.org/10.1007/s11671-009-9516-2

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