Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing

Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing

In this paper, we report the effect of post-gate metallization annealing on the performance of GaN-based High Electron Mobility Transistors (HEMTs). The performances of HEMTs annealed at 200 °C (HEMT1) and at 400 °C (HEMT2) for 5 minutes in N2 ambient are compared. While there...

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Bibliographic Details
Main Authors: Sujan Sarkar, Ramdas P. Khade, Ajay Shanbhag, Nandita DasGupta, Amitava DasGupta
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
HEMT
impact ionization
floating source
negative gate bias stress
traps
Online Access:https://ieeexplore.ieee.org/document/9963604/

Internet

https://ieeexplore.ieee.org/document/9963604/

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