Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

Abstract Realizing applicably appreciated spintronic functionalities basing on the coupling between charge and spin degrees of freedom is still a challenge. For example, the anisotropic magnetoresistance (AMR) effect can be utilized to read out the information stored in magnetic structures. However,...

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Bibliographic Details
Main Authors: Z. L. Sun, A. F. Wang, H. M. Mu, H. H. Wang, Z. F. Wang, T. Wu, Z. Y. Wang, X. Y. Zhou, X. H. Chen
Format: Article
Language:English
Published: Nature Portfolio 2021-11-01
Series:npj Quantum Materials
Online Access:https://doi.org/10.1038/s41535-021-00397-4