Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition
Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2D...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0203156 |