Obtaining Niobium Nitride on n-GaN by Surface Mediated Nitridation Technique

Obtaining Niobium Nitride on n-GaN by Surface Mediated Nitridation Technique

In this work the n-GaN(1000) surface is used as a source of nitrogen atoms in order to obtain niobium nitride film by a surface-mediated nitridation technique. To this end, the physical vapor deposition of the niobium film on GaN is followed by sample annealing at 1123 K. A thermally induced decompo...

Full description

Bibliographic Details
Main Authors: Piotr Mazur, Agata Sabik, Rafał Lewandków, Artur Trembułowicz, Miłosz Grodzicki
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Crystals
Subjects:
gallium nitride
niobium nitride
photoelectron spectroscopy
low energy electron diffraction
scanning tunneling microscopy
Online Access:https://www.mdpi.com/2073-4352/12/12/1847

Internet

https://www.mdpi.com/2073-4352/12/12/1847

Similar Items