Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed
A SiC double-trench MOSFET embedded with a lower-barrier diode and an L-shaped gate-source in the gate trench, showing improved reverse conduction and an improved switching performance, was proposed and studied with 2-D simulations. Compared with a double-trench MOSFET (DT-MOS) and a DT-MOS with a c...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-02-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/2/254 |