An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two parallel gates, and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and so...

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Bibliographic Details
Main Authors: Nilesh Kumar Jaiswal, V. N. Ramakrishnan
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Vertical GaN
trench MOSFET
split gate
on-resistance
switching loss
TCAD
Online Access:https://ieeexplore.ieee.org/document/10097498/

Internet

https://ieeexplore.ieee.org/document/10097498/

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