Novel Radiation Hardened SOT-MRAM Read Circuit for Multi-Node Upset Tolerance

Novel Radiation Hardened SOT-MRAM Read Circuit for Multi-Node Upset Tolerance

The rapid transistor scaling and threshold voltage reduction pose several challenges such as high leakage current and reliability issues. These challenges also make VLSI circuits more susceptible to soft-errors, particularly when subjected to harsh environmental conditions. Hybrid spintronic&#x0...

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Bibliographic Details
Main Authors: Alok Kumar Shukla, Seema Dhull, Arshid Nisar, Sandeep Soni, Namita Bindal, Brajesh Kumar Kaushik
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Open Journal of Nanotechnology
Subjects:
Double node upset (DNU)
magnetic tunnel junction (MTJ)
radiation-hardened
single event upset (SEU)
soft error
Online Access:https://ieeexplore.ieee.org/document/9791114/

Internet

https://ieeexplore.ieee.org/document/9791114/

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