Electrical properties of strained germanium nanofilm

Dependences of the concentration of intrinsic current carriers, electron and hole mobilities and specific conductivity for strained germanium nanofilms grown on the Si, Ge(0,64)Si(0,36) and Ge(0,9)Si(0,1) substrates with crystallographic orientation (001), on their thickness at different temperature...

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Bibliographic Details
Main Authors: S.V. Luniov, P.F. Nazarchuk, O.V. Burban
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2021-05-01
Series:Фізика і хімія твердого тіла
Subjects:
Online Access:https://journals.pnu.edu.ua/index.php/pcss/article/view/4925