Electrical Characterization by Counter-Doped Pocket Design in Tunnel FETs
The effects of low net-doped region on the electrical performance of tunnel field-effect transistors (TFETs) are investigated using a TCAD simulation. Compared with previous studies, it is observed that the low net-doped region between the source and pocket can enhance TFET electrical characteristic...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10082935/ |