Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers
3rd group element nitride based semiconductor compounds are widely used in various optical and electronic devices. One problem in the fabrication of GaN based device heterostructures is the synthesis of p conductivity epitaxial layers. Magnesium is a typical doping impurity for GaN. The choice of op...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2016-06-01
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| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916300512 |