The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs
This work demonstrates the high-frequency characteristics of In0.53Ga0.47As nanowire with scaled wire width by implementing TCAD simulations. The physical models and correlated parameters have been calibrated to the experiments (Ko et al., 2022). As the width of the nanowire is scaled to 10 nm, the...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9913223/ |