Manufacturing Issues of BEOL CMOS-MEMS Devices

Manufacturing Issues of BEOL CMOS-MEMS Devices

In this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor-<inline-formula> <tex-math notation="LaTeX">$HF$ </tex-math></inline-formula>) oxide etching. D...

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Bibliographic Details
Main Authors: Juan Valle, Daniel Fernandez, Olivier Gibrat, Jordi Madrenas
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
CMOS-MEMS
design techniques
hydrogen fluoride
silicon oxide
vapor-HF
release
Online Access:https://ieeexplore.ieee.org/document/9447709/

Internet

https://ieeexplore.ieee.org/document/9447709/

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