Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits
This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2017-09-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/1430 |