Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits
This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2017-09-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/1430 |
| _version_ | 1819109156104175616 |
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| author | S. P. Novosyadlyj S. I. Boyko |
| author_facet | S. P. Novosyadlyj S. I. Boyko |
| author_sort | S. P. Novosyadlyj |
| collection | DOAJ |
| description | This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be reduced to 8 ps at a maximum current of 105 A/cm2 . HBT with one and two (emitter and collector) heterojunctions showed 24 ps delay at 9.1 mW and 17 ps at 40 mW. Keywords: bipolar transistor, heterojunction, gallium arsenide. |
| first_indexed | 2024-12-22T03:21:20Z |
| format | Article |
| id | doaj.art-bbbf11e852ca443b99999ed5bb078ca7 |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-12-22T03:21:20Z |
| publishDate | 2017-09-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-bbbf11e852ca443b99999ed5bb078ca72022-12-21T18:40:44ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892017-09-0117228128510.15330/pcss.17.2.281-2851831Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated CircuitsS. P. Novosyadlyj0S. I. Boyko1Прикарпатський Національний університет ім. В.Стефаника.Прикарпатський Національний університет ім. В.Стефаника.This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be reduced to 8 ps at a maximum current of 105 A/cm2 . HBT with one and two (emitter and collector) heterojunctions showed 24 ps delay at 9.1 mW and 17 ps at 40 mW. Keywords: bipolar transistor, heterojunction, gallium arsenide.http://journals.pu.if.ua/index.php/pcss/article/view/1430 |
| spellingShingle | S. P. Novosyadlyj S. I. Boyko Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits Фізика і хімія твердого тіла |
| title | Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits |
| title_full | Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits |
| title_fullStr | Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits |
| title_full_unstemmed | Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits |
| title_short | Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits |
| title_sort | design and technology analysis bipolar transistors based on high performance structures algaas gaas structures for submicron largeintegrated circuits |
| url | http://journals.pu.if.ua/index.php/pcss/article/view/1430 |
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