Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers
Semiconductor devices based on silicon carbide play an important role as components for power electronic systems. Nowadays it’s recognized that at least 50 percent of electricity distribution all over the world is controlled by such elements. It’s also expected that within a decade, the power device...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IFSA Publishing, S.L.
2019-07-01
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| Series: | Sensors & Transducers |
| Subjects: | |
| Online Access: | https://sensorsportal.com/HTML/DIGEST/july_2019/Vol_235/P_3096.pdf |