Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers
Semiconductor devices based on silicon carbide play an important role as components for power electronic systems. Nowadays it’s recognized that at least 50 percent of electricity distribution all over the world is controlled by such elements. It’s also expected that within a decade, the power device...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IFSA Publishing, S.L.
2019-07-01
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| Series: | Sensors & Transducers |
| Subjects: | |
| Online Access: | https://sensorsportal.com/HTML/DIGEST/july_2019/Vol_235/P_3096.pdf |
| _version_ | 1797772812726829056 |
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| author | Artur Dobrowolski Jakub Jagiełło Wawrzyniec Kaszub Tymoteusz Ciuk |
| author_facet | Artur Dobrowolski Jakub Jagiełło Wawrzyniec Kaszub Tymoteusz Ciuk |
| author_sort | Artur Dobrowolski |
| collection | DOAJ |
| description | Semiconductor devices based on silicon carbide play an important role as components for power electronic systems. Nowadays it’s recognized that at least 50 percent of electricity distribution all over the world is controlled by such elements. It’s also expected that within a decade, the power devices’ share in electricity conversion will rise from today’s 30 to 80 %. This will require next generation of energy- efficient devices for power electronics. |
| first_indexed | 2024-03-12T21:56:24Z |
| format | Article |
| id | doaj.art-bbc3ea8677664fc287f23e866701b5ef |
| institution | Directory Open Access Journal |
| issn | 2306-8515 1726-5479 |
| language | English |
| last_indexed | 2024-03-12T21:56:24Z |
| publishDate | 2019-07-01 |
| publisher | IFSA Publishing, S.L. |
| record_format | Article |
| series | Sensors & Transducers |
| spelling | doaj.art-bbc3ea8677664fc287f23e866701b5ef2023-07-25T16:46:35ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792019-07-0123573136Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial LayersArtur Dobrowolski0Jakub Jagiełło1Wawrzyniec Kaszub2Tymoteusz Ciuk3Łukasiewicz Research Network - Institute of Electronic Materials TechnologyŁukasiewicz Research Network - Institute of Electronic Materials TechnologyŁukasiewicz Research Network - Institute of Electronic Materials TechnologyŁukasiewicz Research Network - Institute of Electronic Materials TechnologySemiconductor devices based on silicon carbide play an important role as components for power electronic systems. Nowadays it’s recognized that at least 50 percent of electricity distribution all over the world is controlled by such elements. It’s also expected that within a decade, the power devices’ share in electricity conversion will rise from today’s 30 to 80 %. This will require next generation of energy- efficient devices for power electronics.https://sensorsportal.com/HTML/DIGEST/july_2019/Vol_235/P_3096.pdfsicpower devicesraman spectroscopysims |
| spellingShingle | Artur Dobrowolski Jakub Jagiełło Wawrzyniec Kaszub Tymoteusz Ciuk Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers Sensors & Transducers sic power devices raman spectroscopy sims |
| title | Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers |
| title_full | Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers |
| title_fullStr | Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers |
| title_full_unstemmed | Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers |
| title_short | Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers |
| title_sort | temperature investigation of phonon plasmon modes in 4h sic homoepitaxial layers |
| topic | sic power devices raman spectroscopy sims |
| url | https://sensorsportal.com/HTML/DIGEST/july_2019/Vol_235/P_3096.pdf |
| work_keys_str_mv | AT arturdobrowolski temperatureinvestigationofphononplasmonmodesin4hsichomoepitaxiallayers AT jakubjagiełło temperatureinvestigationofphononplasmonmodesin4hsichomoepitaxiallayers AT wawrzynieckaszub temperatureinvestigationofphononplasmonmodesin4hsichomoepitaxiallayers AT tymoteuszciuk temperatureinvestigationofphononplasmonmodesin4hsichomoepitaxiallayers |