Optical and structural properties of InGaN/GaN quantum well green laser diodes with AlGaN interlayer
Scanning transmission electron microscope and temperature-dependent photoluminescence were used to study the effects of AlGaN interlayer (IL) following InGaN quantum wells (QWs) on the structural and optical properties of InGaN green laser diodes (LDs) grown on c-plane GaN substrate. It is found tha...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0140589 |