A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI
This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise charac...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-10-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/19/3255 |