RF reactor with asymmetrical electrodes for reactive ion etching of semiconductors

RF reactor with asymmetrical electrodes for reactive ion etching of semiconductors

Results of experimental and theoretical study of RF CCP reactor for reactive ion etching of semiconductors are presented. Breakdown curve and domain of the discharge existence are measured in various gases (argon, fluorocarbon, oxygen). The dependences of the DC selfbias potential on the RF voltage...

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Bibliographic Details
Main Authors: Dudin S. V., Lisovskiy V. A., Dahov A. N., Pletniov V. M.
Format: Article
Language:English
Published: Politehperiodika 2011-04-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
HF capacitive discharge
plasma-chemical etching of semiconductor materials
plasma-chemical reactor
Online Access:http://www.tkea.com.ua/tkea/2011/1-2_2011/pdf/13.zip

Internet

http://www.tkea.com.ua/tkea/2011/1-2_2011/pdf/13.zip

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