Electron backscatter diffraction in the silicon nanowires
In this paper we consider the formation on the surface of silicon by metal-induced chemical etching, the silicon nanowires and the study of their electron (SEM) and (TEM) microscopy, X-ray diffraction (EDX) analysis and electron backscatter diffraction (EBDS) in nanowires. Combination of field emiss...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Al-Farabi Kazakh National University
2016-10-01
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| Series: | Physical Sciences and Technology |
| Subjects: | |
| Online Access: | http://phst/index.php/journal/article/view/65 |
| _version_ | 1797645254695845888 |
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| author | K.K. Dikhanbayev V.A. Sivakov F. Talkenberg G.K. Mussabek Ye.T. Taurbayev N.N. Tanatov E. Shabdan |
| author_facet | K.K. Dikhanbayev V.A. Sivakov F. Talkenberg G.K. Mussabek Ye.T. Taurbayev N.N. Tanatov E. Shabdan |
| author_sort | K.K. Dikhanbayev |
| collection | DOAJ |
| description | In this paper we consider the formation on the surface of silicon by metal-induced chemical etching, the silicon nanowires and the study of their electron (SEM) and (TEM) microscopy, X-ray diffraction (EDX) analysis and electron backscatter diffraction (EBDS) in nanowires. Combination of field emission SEM and EBSD possible to determine the orientation of the individual grains, the local texture oriented correlation on solid surfaces of polycrystalline material. This method of producing silicon nanowires has a number of the above-mentioned advantages over other methods. In addition, the studied objects themselves exhibit interesting optical properties, such as the localization of light, photoluminescence (PL), very low reflectance ( 90% at 500 nm). |
| first_indexed | 2024-03-11T14:44:38Z |
| format | Article |
| id | doaj.art-bc0b9b6782a546a4990d482128a51740 |
| institution | Directory Open Access Journal |
| issn | 2409-6121 |
| language | English |
| last_indexed | 2024-03-11T14:44:38Z |
| publishDate | 2016-10-01 |
| publisher | Al-Farabi Kazakh National University |
| record_format | Article |
| series | Physical Sciences and Technology |
| spelling | doaj.art-bc0b9b6782a546a4990d482128a517402023-10-30T13:11:33ZengAl-Farabi Kazakh National UniversityPhysical Sciences and Technology2409-61212016-10-0122Electron backscatter diffraction in the silicon nanowiresK.K. Dikhanbayev0V.A. Sivakov1F. Talkenberg2G.K. Mussabek3Ye.T. Taurbayev4N.N. Tanatov5E. Shabdan6Al-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, KazakhstanLeibniz Institute of Photonic Technology, Technology e.V. PF 100239, 07702 Jena, GermanyLeibniz Institute of Photonic Technology, Technology e.V. PF 100239, 07702 Jena, GermanyAl-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, IETP, al-Farabi 71, 050040 Almaty, KazakhstanIn this paper we consider the formation on the surface of silicon by metal-induced chemical etching, the silicon nanowires and the study of their electron (SEM) and (TEM) microscopy, X-ray diffraction (EDX) analysis and electron backscatter diffraction (EBDS) in nanowires. Combination of field emission SEM and EBSD possible to determine the orientation of the individual grains, the local texture oriented correlation on solid surfaces of polycrystalline material. This method of producing silicon nanowires has a number of the above-mentioned advantages over other methods. In addition, the studied objects themselves exhibit interesting optical properties, such as the localization of light, photoluminescence (PL), very low reflectance ( 90% at 500 nm).http://phst/index.php/journal/article/view/65Key wordssiliconsilicon nanowiresmorphologymetal-induced chemical etchingelectron backscatter diffraction. PACS numbers |
| spellingShingle | K.K. Dikhanbayev V.A. Sivakov F. Talkenberg G.K. Mussabek Ye.T. Taurbayev N.N. Tanatov E. Shabdan Electron backscatter diffraction in the silicon nanowires Physical Sciences and Technology Key words silicon silicon nanowires morphology metal-induced chemical etching electron backscatter diffraction. PACS numbers |
| title | Electron backscatter diffraction in the silicon nanowires |
| title_full | Electron backscatter diffraction in the silicon nanowires |
| title_fullStr | Electron backscatter diffraction in the silicon nanowires |
| title_full_unstemmed | Electron backscatter diffraction in the silicon nanowires |
| title_short | Electron backscatter diffraction in the silicon nanowires |
| title_sort | electron backscatter diffraction in the silicon nanowires |
| topic | Key words silicon silicon nanowires morphology metal-induced chemical etching electron backscatter diffraction. PACS numbers |
| url | http://phst/index.php/journal/article/view/65 |
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