InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes

InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes

Phosphor-free InGaN/GaN multiple quantum well (MQW) white light-emitting diodes (LEDs) have the advantages of simpler device process and potentially higher efficiency, and have attracted much attention in recent years. A host of technologies are emerging for implementing such white-light LEDs. Among...

Full description

Bibliographic Details
Main Authors: G.F. Yang, Q. Zhang, J. Wang, Y.N. Lu, P. Chen, Z.L. Wu, S.M. Gao, G.Q. Chen
Format: Article
Language:English
Published: Elsevier 2016-11-01
Series:Reviews in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2405428316300107

Internet

http://www.sciencedirect.com/science/article/pii/S2405428316300107

Similar Items