Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects

Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects

We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided design (TCAD). Various defect cluster conditions...

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Bibliographic Details
Main Authors: Minji Bang, Jonghyeon Ha, Gyeongyeop Lee, Minki Suh, Jungsik Kim
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Micromachines
Subjects:
displacement defect
fin field-effect-transistor
cosmic rays
terrestrial radiation
technology computer-aided design (TCAD)
Online Access:https://www.mdpi.com/2072-666X/14/5/1090

Internet

https://www.mdpi.com/2072-666X/14/5/1090

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