Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects
We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided design (TCAD). Various defect cluster conditions...
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| Format: | Article |
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MDPI AG
2023-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/5/1090 |
| _version_ | 1797599009913700352 |
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| author | Minji Bang Jonghyeon Ha Gyeongyeop Lee Minki Suh Jungsik Kim |
| author_facet | Minji Bang Jonghyeon Ha Gyeongyeop Lee Minki Suh Jungsik Kim |
| author_sort | Minji Bang |
| collection | DOAJ |
| description | We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided design (TCAD). Various defect cluster conditions and fin structures are considered as variables to estimate the worst-case scenario for displacement defects. The rectangular defect clusters capture more widely distributed charges at the fin top, reducing the on- and off-current. The read static noise margin (RSNM) is the most degraded in the pull-down transistor during the read operation. The increased fin width decreases the RSNM due to the gate field. The current per cross-sectional area increases when the fin height decreases, but the energy barrier lowering by the gate field is similar. Therefore, the reduced fin width and increased fin height structure suit the 10 nm node FinFET 6T SRAMs with high radiation hardness. |
| first_indexed | 2024-03-11T03:29:26Z |
| format | Article |
| id | doaj.art-bc41958415a44a088db69df06a76c7d6 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T03:29:26Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-bc41958415a44a088db69df06a76c7d62023-11-18T02:31:38ZengMDPI AGMicromachines2072-666X2023-05-01145109010.3390/mi14051090Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement DefectsMinji Bang0Jonghyeon Ha1Gyeongyeop Lee2Minki Suh3Jungsik Kim4Department of Electrical Engineering, Gyeongsang National University, Jinju 52828, Gyeongnam, Republic of KoreaDepartment of Electrical Engineering, Gyeongsang National University, Jinju 52828, Gyeongnam, Republic of KoreaDepartment of Electrical Engineering, Gyeongsang National University, Jinju 52828, Gyeongnam, Republic of KoreaDepartment of Electrical Engineering, Gyeongsang National University, Jinju 52828, Gyeongnam, Republic of KoreaDepartment of Electrical Engineering, Gyeongsang National University, Jinju 52828, Gyeongnam, Republic of KoreaWe comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM) based on a 10 nm node fin field-effect transistor (FinFET) using technology computer-aided design (TCAD). Various defect cluster conditions and fin structures are considered as variables to estimate the worst-case scenario for displacement defects. The rectangular defect clusters capture more widely distributed charges at the fin top, reducing the on- and off-current. The read static noise margin (RSNM) is the most degraded in the pull-down transistor during the read operation. The increased fin width decreases the RSNM due to the gate field. The current per cross-sectional area increases when the fin height decreases, but the energy barrier lowering by the gate field is similar. Therefore, the reduced fin width and increased fin height structure suit the 10 nm node FinFET 6T SRAMs with high radiation hardness.https://www.mdpi.com/2072-666X/14/5/1090displacement defectfin field-effect-transistorcosmic raysterrestrial radiationtechnology computer-aided design (TCAD) |
| spellingShingle | Minji Bang Jonghyeon Ha Gyeongyeop Lee Minki Suh Jungsik Kim Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects Micromachines displacement defect fin field-effect-transistor cosmic rays terrestrial radiation technology computer-aided design (TCAD) |
| title | Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects |
| title_full | Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects |
| title_fullStr | Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects |
| title_full_unstemmed | Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects |
| title_short | Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects |
| title_sort | performance degradation in static random access memory of 10 nm node finfet owing to displacement defects |
| topic | displacement defect fin field-effect-transistor cosmic rays terrestrial radiation technology computer-aided design (TCAD) |
| url | https://www.mdpi.com/2072-666X/14/5/1090 |
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