Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses

Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses

Abstract Advanced synaptic devices capable of neuromorphic data processing are widely studied as the building block in the next‐generation computing architecture for artificial intelligence applications. Due to its fast speed, low power, and excellent complementary metal‐oxide‐semiconductor (CMOS) c...

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Bibliographic Details
Main Authors: Yuanyuan Cao, Yilun Liu, Yafen Yang, Qingxuan Li, Tianbao Zhang, Li Ji, Hao Zhu, Lin Chen, Qingqing Sun, David Wei Zhang
Format: Article
Language:English
Published: Wiley-VCH 2023-05-01
Series:Advanced Electronic Materials
Subjects:
conductance ratio
ferroelectricity
ferroelectric tunnel junction (FTJ)‐synapse
HZO
Online Access:https://doi.org/10.1002/aelm.202201247

Internet

https://doi.org/10.1002/aelm.202201247

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