Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application

Abstract Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PI...

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Bibliographic Details
Main Authors: Hao Zhong, Nasir Ilyas, Yuhao Song, Wei Li, Yadong Jiang
Format: Article
Language:English
Published: SpringerOpen 2018-10-01
Series:Nanoscale Research Letters
Subjects:
Black silicon
Light absorptance
Band gap
Device responsivity
Online Access:http://link.springer.com/article/10.1186/s11671-018-2741-9

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http://link.springer.com/article/10.1186/s11671-018-2741-9

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