Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application
Abstract Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PI...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-10-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2741-9 |
| _version_ | 1797761863767818240 |
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| author | Hao Zhong Nasir Ilyas Yuhao Song Wei Li Yadong Jiang |
| author_facet | Hao Zhong Nasir Ilyas Yuhao Song Wei Li Yadong Jiang |
| author_sort | Hao Zhong |
| collection | DOAJ |
| description | Abstract Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are used to fabricate microstructured black silicon on the surface of C-Si. These improved surfaces doped with sulfur elements realize a narrower band gap and an enhancement of light absorptance, especially in the near-infrared range (800 to 2000 nm). Meanwhile, the maximum light absorptance increases significantly up to 83%. A Si-PIN photoelectronic detector with microstructured black silicon at the back surface exhibits remarkable device performance, leading to a responsivity of 0.53 A/W at 1060 nm. This novel microstructured black silicon, combining narrow band gap characteristic, could have a potential application in near-infrared photoelectronic detection. |
| first_indexed | 2024-03-12T19:19:16Z |
| format | Article |
| id | doaj.art-bc578005363f45e98c191431b5d834ad |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:19:16Z |
| publishDate | 2018-10-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-bc578005363f45e98c191431b5d834ad2023-08-02T05:20:03ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-10-011311810.1186/s11671-018-2741-9Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device applicationHao Zhong0Nasir Ilyas1Yuhao Song2Wei Li3Yadong Jiang4State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of ChinaSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaAbstract Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are used to fabricate microstructured black silicon on the surface of C-Si. These improved surfaces doped with sulfur elements realize a narrower band gap and an enhancement of light absorptance, especially in the near-infrared range (800 to 2000 nm). Meanwhile, the maximum light absorptance increases significantly up to 83%. A Si-PIN photoelectronic detector with microstructured black silicon at the back surface exhibits remarkable device performance, leading to a responsivity of 0.53 A/W at 1060 nm. This novel microstructured black silicon, combining narrow band gap characteristic, could have a potential application in near-infrared photoelectronic detection.http://link.springer.com/article/10.1186/s11671-018-2741-9Black siliconLight absorptanceBand gapDevice responsivity |
| spellingShingle | Hao Zhong Nasir Ilyas Yuhao Song Wei Li Yadong Jiang Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application Nanoscale Research Letters Black silicon Light absorptance Band gap Device responsivity |
| title | Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application |
| title_full | Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application |
| title_fullStr | Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application |
| title_full_unstemmed | Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application |
| title_short | Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application |
| title_sort | enhanced near infrared absorber two step fabricated structured black silicon and its device application |
| topic | Black silicon Light absorptance Band gap Device responsivity |
| url | http://link.springer.com/article/10.1186/s11671-018-2741-9 |
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