Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application
Abstract Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PI...
Main Authors: | Hao Zhong, Nasir Ilyas, Yuhao Song, Wei Li, Yadong Jiang |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2018-10-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-018-2741-9 |
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