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Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers

Bibliographic Details
Main Authors: Akihiro Ohtake, Takaaki Mano, Kazutaka Mitsuishi, Yoshiki Sakuma
Format: Article
Language:English
Published: American Chemical Society 2018-11-01
Series:ACS Omega
Online Access:http://dx.doi.org/10.1021/acsomega.8b02359
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http://dx.doi.org/10.1021/acsomega.8b02359

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