Bias-assisted photoelectrochemical planarization of GaN (0001) with impurity concentration distribution
To planarize semiconductor materials such as gallium nitride (GaN) and silicon carbide with high efficiency, we developed a polarization method that combines ultraviolet irradiation and an abrasive-free polishing method known as catalyst-referred etching (CARE). In this method, the substrate surface...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0151387 |